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LX5506E
INTEGRATED PRODUCTS
InGaP HBT 4 - 6GHz Power Amplifier
PRELIMINARY DATA SHEET
DESCRIPTION
KEY FEATURES Advanced InGaP HBT 4.9-5.85GHz Operation Single-Polarity 3.3V Supply Total Current ~ 200mA for Pout=19dBm at 5.25GHz P1dB > +26dBm Power Gain ~ 23dB at 5.25GHz & Pout=19dBm EVM ~ 3% for 64QAM/ 54Mbps & Pout=19dBm Integrated Power Detectors On-Chip Input Match Simple Output Match Minimal External Components Small Footprint: 3x3mm2 Low Profile: 0.9mm
APPLICATIONS/BENEFITS
The LX5506E is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9-5.85 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, onchip input matching and output prematching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It also has an integrated
differential output power detector pair to help reduce BOM cost and PCB board space for system implementation. LX5506E is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5506E an ideal solution for broadband, high-gain power amplifier requirements for IEEE 802.11a, and Hiperlan2 portable WLAN applications.
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IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com
FCC U-N11 Wireless IEEE 802.11a HiperLAN2
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
TJ (C) 0 to 70
LQ 16-Pin
Plastic MLPQ
LX5506E-LQ
LX5506E LX5506E
Note: Available in Tape & Reel. Append the letter "T" to the part number. (i.e. LX5506E-LQT)
Copyright 2000 Rev. 1.0, 2003-01-10
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
LX5506E
INTEGRATED PRODUCTS
InGaP HBT 4 - 6GHz Power Amplifier
PRELIMINARY DATA SHEET
ABSOLUTE MAXIMUM RATINGS
PACKAGE PIN OUT
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DC Supply Voltage, RF Off...............................................................................6V Collector Current ........................................................................................500mA Total Power Dissipation....................................................................................3W RF Input Power........................................................................................... 10dBm Operation Ambient Temperature .......................................................-40 to +85C Storage Temperature.......................................................................... -60 to 150C
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal.
13 14 15 16 12 11 10 9 8 7 6 5 1 2 3 4
LQ PACKAGE
(Bottom View)
FUNCTIONAL PIN DESCRIPTION Name RF IN Pin # 2, 3 Description RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage. Supply voltage for the bias reference and control circuits. This pin can be combined with VC1, VC2 and VC3 pins, resulting in a single supply voltage (referred to as Vc). Bias control voltage for the first stage. Bias control voltage for the second stage. Bias control voltage for the third stage. Detector output voltage for the third stage PA output power. Detector output voltage for the reference power detector. RF output for the power amplifier. This pin is AC-coupled and does not require a DC-blocking capacitor. DC supply voltage for the first stage amplifier. DC supply voltage for the second stage amplifier. DC supply voltage for the third stage amplifier. The center metal base of the MLP package provides both DC/RF ground as well as heat sink for the power amplifier. These pins are unused and not connected to the device inside the package. They can be treated either as open pins, or connected to ground for better heat dissipation.
VCC VB1 VB2 VB3 DET REF
4 5 6 7 9 8
RF OUT VC1 VC2 VC3 GND
10, 11 16 15 14 Center Metal
PACKAGE DATA PACKAGE DATA
NC
1,12,13
Copyright 2000 Rev. 1.0, 2003-01-10
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
LX5506E
INTEGRATED PRODUCTS
InGaP HBT 4 - 6GHz Power Amplifier
PRELIMINARY DATA SHEET
ELECTRICAL CHARACTERISTICS Unless otherwise specified, the following specifications apply over the following test conditions: Vc = 3.3V, Icq = 100mA, TA = 25C
PARAMETER Frequency Range Output Power at 1dB Compression Power Gain at Pout=19dBm EVM at Pout=19dBm Total Current at Pout=19dBm Quiescent Current Bias Control Reference Current Small-Signal Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Second Harmonic Third Harmonic Detector Response Ramp-On Time Pout = 19dBm Pout = 19dBm Pout = 19dBm 10~90% DET tON Over 200MHz -20 to +85 C
o
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CONDITION
SYMBOL f Pout Gp
MIN. 5.15 25
TYP. 27 23 3 200 100 2 22 +/-0.5 +/-1 -20 -10 -40 -40 -40 1.7 100
MAX. 5.35
MIN. 5.7 25
TYP. 27 21 3.5 210 100 2 20 +/-0.5 +/-1
MAX. 5.85
UNIT GHz dBm dB % mA mA mA dB dB dB
64QAM/54Mbps Ic_total Icq For Icq=100mA Iref S21 S21 S21 S11 S22 S12
-10
-12 -10 -40 -40 -40 1.2 100
-10
dB dB dB dBc dBc V ns
Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink.
E ELECTRICALS
Copyright 2000 Rev. 1.0, 2003-01-10
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
LX5506E
INTEGRATED PRODUCTS
InGaP HBT 4 - 6GHz Power Amplifier
PRELIMINARY DATA SHEET
CHARACTERISTIC CURVES Typical EVM and Total Current vs. Pout (Vc=3.3V, Vref=2.9V, Icq=95mA, Freq=5.25GHz, 64QAM/54Mbps)
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7 6.5 6 5.5 5 EVM Ictotal
250 240 230 220 210 200 190 180 170 160 150 140 15 16 17 18 19 20 21 130
Ictotal(mA)
EVM(%)
4.5 4 3.5 3 2.5 2 1.5 1
Pout(dBm)
Note: EVM is actual measured data without de-embedding. Test system EVM floor is 1.4~1.6% for input power levels in test. Typical ACPR vs. Pout (Vc=3.3V, Vref=2.9V, Icq=95mA, Freq=5.25GHz, 64QAM/54Mbps, 30MHz Offset)
-45 -46 -47 -48 ACPR
ACPR(dBc)
-49 -50 -51 -52 -53 -54 -55 15 16 17 18 19 20 21
E ELECTRICALS
Pout(dBm)
Copyright 2000 Rev. 1.0, 2003-01-10
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 4
LX5506E
INTEGRATED PRODUCTS
InGaP HBT 4 - 6GHz Power Amplifier
PRELIMINARY DATA SHEET
CHARACTERISTIC CURVES EVM and Total Current vs. Frequency (Vc=3.3V, Vref=2.9V, Icq=95mA, Pout=18dBm, 64QAM/54Mbps)
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6 5.5 5 4.5 EVM Ictotal
215 210 205
EVM(%)
4 3.5 3 2.5 2 1.5 1 4.9 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8
Ictotal(mA)
200 195 190 185 180 5.9
Frequency(GHz)
Note: EVM is actual measured data without de-embedding. Yokogawa VG6000 system EVM floor is 1.4~1.6% for input power levels in test.
Typical Power Detector Response (Vc=3.3V, Vref=2.9V, Icq=95mA, Freq=5.25GHz, 64QAM/54Mbps)
2.2 2.1 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0
DET DET-REF
DetectorOutput(V)
E ELECTRICALS
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21
Pout(dBm)
Copyright 2000 Rev. 1.0, 2003-01-10
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5
LX5506E
INTEGRATED PRODUCTS
InGaP HBT 4 - 6GHz Power Amplifier
PRELIMINARY DATA SHEET
PACKAGE DIMENSIONS
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LQ
16-Pin MLPQ Plastic (3mmx3mm EP)
A
F
B
E
H G D1 D
MILLIMETERS MIN MAX 3.00 BSC 3.00 BSC 0.80 1.00 0.18 0.30 0 0.05 1.30 1.55 0.18 0.30 0.50 BSC 1.30 1.55 0.30 0.50 INCHES MIN MAX 0.118 BSC 0.118 BSC 0.031 0.039 0.007 0.011 0 0.002 0.051 0.061 0.007 0.011 0.019 BSC 0.051 0.061 0.011 0.020
I
C
Dim A B C D D1 E F G H I
Note:
P PACKAGE
1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006") on any side. Lead dimension shall not include solder coverage.
Copyright 2000 Rev. 1.0, 2003-01-10
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 6
LX5506E
INTEGRATED PRODUCTS
InGaP HBT 4 - 6GHz Power Amplifier
PRELIMINARY DATA SHEET
NOTES
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N NOTES
PRODUCT PRELIMINARY DATA - Information contained in this document is pre-production data, and is proprietary to Microsemi. It may not be modified in any way without the express written consent of Microsemi. Product referred to herein is not guaranteed to achieve preliminary or production status and product specifications, configurations, and availability may change at any time.
Copyright 2000 Rev. 1.0, 2003-01-10
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 7

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